L2SA812QLT1G Datasheet, PDF (1/5 Pages) Leshan Radio Company – General Purpose Transistors Epitaxial planar type.

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
FEATURE
L2SA812QLT1G Series
ƽHigh Voltage: V_CEO = -50 V.
ƽEpitaxial planar type.
ƽNPN complement: L2SC1623
3
ƽWe declare that the material of product compliance with RoHS requirements.
1
DEVICE MARKING AND ORDERING INFORMATION
2
Device
Marking
Shipping
SOT-23
L2SA812QLT1G
M8
3000/Tape&Reel
L2SA812QLT3G
M8
L2SA812RLT1G
M6
10000/Tape&Reel
3000/Tape&Reel
3
COLLECTOR
L2SA812RLT3G
M6
L2SA812SLT1G
M7
L2SA812SLT3G
M7
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Symbol
V_CEO
V_CBO
V_EBO
Collector current-continuoun
IC
THERMAL CHARATEERISTICS
Characteristic
Total Device Dissipation FR-5 Board, (1)
T_A=25^oC
Derate above 25^oC
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA=25 ^oC
Derate above 25^oC
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
1
BASE
L2SA812
-50
-60
-6
-150
Unit
V
V
V
mAdc
Symbol
P_D
R _θJA
P_D
R _θJA
Tj ,Tstg
Max
200
1.8
556
200
2.4
417
-55 to +150
Unit
mW
mW/^oC
o_C/W
mW
mW/^oC
o_C/W
o_C
2
EMITTER
Rev.O 1/5