L2SA812LT1 Datasheet, PDF (1/5 Pages) Leshan Radio Company – General Purpose Transistors

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
FEATURE
ƽHigh Voltage: V_CEO = -50 V.
ƽEpitaxial planar type.
ƽNPN complement: L2SC1623
ƽPb-Free Package is available.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L2SA812QLT1
M8
3000/Tape&Reel
L2SA812QLT1G
L2SA812RLT1
M8
(Pb-Free)
M6
3000/Tape&Reel
3000/Tape&Reel
L2SA812RLT1G
L2SA812SLT1
M6
(Pb-Free)
M7
3000/Tape&Reel
3000/Tape&Reel
L2SA812SLT1G
M7
(Pb-Free)
MAXIMUM RATINGS
3000/Tape&Reel
Rating
Symbol
L2SA812
Unit
Collector-Emitter Voltage
V_CEO
-50
V
Collector-Base Voltage
V_CBO
-60
V
Emitter-Base Voltage
V_EBO
-6
V
Collector current-continuoun
IC
THERMAL CHARATEERISTICS
-150
mAdc
Characteristic
Total Device Dissipation FR-5 Board, (1)
T_A=25^oC
Derate above 25^oC
Thermal Resistance, Junction to Ambient
Symbol
P_D
R _θJA
Max
200
1.8
556
Total Device Dissipation
Alumina Substrate, (2) TA=25 ^oC
Derate above 25^oC
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
P_D
R _θJA
Tj ,Tstg
200
2.4
417
-55 to +150
L2SA812*LT1
3
1
2
SOT-23
1
BASE
3
COLLECTOR
2
EMITTER
Unit
mW
mW/^oC
o_C/W
mW
mW/^oC
o_C/W
o_C
L2SA812-1/5