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L2SA2030M3T5G_11 Datasheet, PDF (1/3 Pages) Leshan Radio Company – Low frequency transistor For switching, for muting. | |||
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LESHAN RADIO COMPANY, LTD.
Low frequency transistor
The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes.
zApplications
For switching, for muting.
PNP
zFeatures
1) A collector current is large.
2) Collector saturation voltage is low.
VCE (sat) ⤠250mA
At IC = â200mA / IB = â10mA
3) We declare that the material of product compliance with RoHS requirements.
L2SA2030M3T5G
3
2
1
SOT â723
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
ICP
Limits
â15
â12
â6
â500
â1
Unit
V
V
V
mA
Aâ
1
BASE
Collector power dissipation
PC
150
mW
Junction temperature
Storage temperature
âSingle pulse, Pw=1ms
Tj
150
°C
Tstg
â55 to +150 °C
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage BVCBO â15 â â V IC= â10µA
Collector-emitter breakdown voltage BVCEO â12 â â V IC= â1mA
Emitter-base breakdown voltage
BVEBO â6 â
â
V IE= â10µA
Collector cutoff current
ICBO
â
â â100 nA VCB= â15V
Emitter cutoff current
IEBO
â
â â100 nA VEB= â6V
DC current transfer ratio
hFE 270 â 680 â VCE= â2V / IC= â10mA
Collector-emitter saturation voltage VCE (sat) â â100 â250 mV IC= â200mA / IB= â10mA
Transition frequency
fT
â 260 â MHz VCE= â2V, IE=10mA, fT=100MHz
Output capacitance
Cob â 6.5 â pF VCB= â10V, IE=0A, f=1MHz
3
COLLECTOR
2
EMITTER
z Device marking and ordering information
Device
Marking
L2SA2030M3T5G
BW
Shipping
8000/Tape&Reel
Rev.O 1/3
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