L2SA2030M3T5G Datasheet, PDF (1/3 Pages) Leshan Radio Company – Low frequency transistor

LESHAN RADIO COMPANY, LTD.
Low frequency transistor
The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes.
zApplications
For switching, for muting.
PNP
zFeatures
1) A collector current is large.
2) Collector saturation voltage is low.
VCE (sat) ≤ 250mA
At IC = −200mA / IB = −10mA
3) We declare that the material of product compliance with RoHS requirements.
L2SA2030M3T5G
3
1
2
SOT –723
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
ICP
Limits
−15
−12
−6
−500
−1
Unit
V
V
V
mA
A^∗
1
BASE
Collector power dissipation
PC
150
mW
Junction temperature
Storage temperature
∗Single pulse, Pw=1ms
Tj
150
°C
Tstg
−55 to +150 °C
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage BVCBO −15 − − V IC= −10µA
Collector-emitter breakdown voltage BVCEO −12 − − V IC= −1mA
Emitter-base breakdown voltage
BVEBO −6 −
−
V IE= −10µA
Collector cutoff current
ICBO
−
− −100 nA VCB= −15V
Emitter cutoff current
IEBO
−
− −100 nA VEB= −6V
DC current transfer ratio
hFE 270 − 680 − VCE= −2V / IC= −10mA
Collector-emitter saturation voltage VCE (sat) − −100 −250 mV IC= −200mA / IB= −10mA
Transition frequency
fT
− 260 − MHz VCE= −2V, IE=10mA, fT=100MHz
Output capacitance
Cob − 6.5 − pF VCB= −10V, IE=0A, f=1MHz
3
COLLECTOR
2
EMITTER
z Device marking and ordering information
Device
Marking
L2SA2030M3T5G
BW
Shipping
4000/Tape&Reel
1/3