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L2SA2029RM3T5G_15 Datasheet, PDF (1/5 Pages) Leshan Radio Company – PNP Silicon General Purpose Amplifier Transistor | |||
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LESHAN RADIO COMPANY, LTD.
PNP Silicon General
Purpose Amplifier Transistor
This PNP transistor is designed for general purpose amplifier
applications. This device is housed in the SOTâ723 package which is
designed for low power surface mount applications, where board
space is at a premium.
⢠Reduces Board Space
⢠High hFE, 210 â460 (Typical)
⢠Low VCE(sat), < 0.5 V
⢠ESD Performance: Human Body Model; u 2000 V,
Machine Model; u 200 V
⢠Available in 4 mm, 8000 Unit Tape & Reel
⢠This is a PbâFree Device
L2SA2029QM3T5G
L2SA2029RM3T5G
3
2
1
SOT â723
COLLECTOR
3
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
CollectorâBase Voltage
V(BR)CBO
CollectorâEmitter Voltage
V(BR)CEO
EmitterâBase Voltage
V(BR)EBO
Collector Current â Continuous
IC
THERMAL CHARACTERISTICS
â60
â50
â6.0
â100
Vdc
Vdc
Vdc
mAdc
Rating
Symbol
Max
Unit
Power Dissipation (Note 1)
PD
265
mW
Junction Temperature
TJ
150
°C
Storage Temperature Range
Tstg
â55 ~ + 150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FRâ4 glass epoxy printed circuit board using the
minimum recommended footprint.
1
BASE
2
EMITTER
MARKING
DIAGRAM
3
SOTâ723
XXM
2
1
XX = Specific Device Code
(FQ = L2SA2029QM3T5G
FR = L2SA2029RM3T5G)
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping
L2SA2029QM3T5G SOTâ723 8000/Tape & Reel
(PbâFree)
Rev.O 1/5
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