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L2SA1774T1 Datasheet, PDF (1/3 Pages) Leshan Radio Company – General Purpose Transistors PNP Silicon | |||
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LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
COLLECTOR
3
L2SA1774*T1
1
BASE
2
EMITTER
!Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
Limits
â60
â50
â6
â0.15
Unit
V
V
V
A (DC)
PC
0.15
W
Tj
150
ËC
Tstg
â55~+150
ËC
3
1
2
SC-89
!Electrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO â60
Collector-emitter breakdown voltage BVCEO â50
Emitter-base breakdown voltage
BVEBO â6
Collector cutoff current
ICBO
â
Emitter cutoff current
IEBO
â
Collector-emitter saturation voltage VCE(sat) â
DC current transfer ratio
hFE
120
Transition frequency
fT
â
Output capacitance
Cob
â
Typ.
â
â
â
â
â
â
â
140
4.0
Max.
â
â
â
â0.1
â0.1
â0.5
560
â
5.0
Unit
V
V
V
µA
µA
V
â
MHz
pF
Conditions
IC=â50µA
IC=â1µA
IE=â50µA
VCB=â60V
VEB=â6V
IC/IB=â50mA/â5mA
VCE=â6V, IC=â1mA
VCE=â12V, IE=2mA, f=30MHz
VCB=â12V, IE=0A, f=1MHz
!Device marking
L2SA1774QT1=FQ L2SA1774ST1=FS L2SA1774RT1=FR
!hFE values are classified as follows:
Item
hFE
Q
120~270
R
180~390
S
270~560
L2SA1774*T1-1/3
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