L2SA1774QT1G_11 Datasheet, PDF (1/3 Pages) Leshan Radio Company – General Purpose Transistors PNP Silicon

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
z We declare that the material of product compliance with RoHS requirements.
z DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L2SA1774QT1G
FQ
3000/Tape&Reel
L2SA1774QT3G
FQ
10000/Tape&Reel
L2SA1774RT1G
FR
3000/Tape&Reel
L2SA1774RT3G
FR
10000/Tape&Reel
L2SA1774ST1G
FS
3000/Tape&Reel
L2SA1774ST3G
FS
10000/Tape&Reel
L2SA1774QT1G
Series
SC-89
COLLECTOR
3
!Absolute maximum ratings (Ta=25°C)
1
BASE
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
−60
V
Collector-emitter voltage
VCEO
−50
V
Emitter-base voltage
VEBO
−6
V
Collector current
IC
−0.15
A (DC)
Collector power
dissipation
PC
0.15
W
Junction temperature
Storage temperature
Tj
150
˚C
Tstg
−55~+150
˚C
!Electrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO −60
Collector-emitter breakdown voltage BVCEO −50
Emitter-base breakdown voltage
BVEBO −6
Collector cutoff current
ICBO
−
Emitter cutoff current
IEBO
−
Collector-emitter saturation voltage VCE(sat) −
DC current transfer ratio
hFE
120
Transition frequency
fT
−
Output capacitance
Cob
−
Typ.
−
−
−
−
−
−
−
140
4.0
Max.
−
−
−
−0.1
−0.1
−0.5
560
−
5.0
Unit
V
V
V
µA
µA
V
−
MHz
pF
Conditions
IC=−50µA
IC=−1µA
IE=−50µA
VCB=−60V
VEB=−6V
IC/IB=−50mA/−5mA
VCE=−6V, IC=−1mA
VCE=−12V, IE=2mA, f=30MHz
VCB=−12V, IE=0A, f=1MHz
!hFE values are classified as follows:
Item
Q
R
hFE
120~270 180~390
S
270~560
2
EMITTER
Rev.O 1/3