L2SA1774QT1G Datasheet, PDF (1/3 Pages) Leshan Radio Company – General Purpose Transistors PNP Silicon

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
z We declare that the material of product compliance with RoHS requirements.
z ORDERING INFORMATION
Device
L2SA1774XT1G
L2SA1774XT3G
Marking
FX
FX
Shipping
3000/Tape & Reel
10000/Tape & Reel
!Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
Limits
−60
−50
−6
−0.15
Unit
V
V
V
A (DC)
PC
0.15
W
Tj
150
˚C
Tstg
−55~+150
˚C
L2SA1774XT1G
3
1
2
SC-89
COLLECTOR
3
1
BASE
2
EMITTER
!Electrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO −60
Collector-emitter breakdown voltage BVCEO −50
Emitter-base breakdown voltage
BVEBO −6
Collector cutoff current
ICBO
−
Emitter cutoff current
IEBO
−
Collector-emitter saturation voltage VCE(sat) −
DC current transfer ratio
hFE
120
Transition frequency
fT
−
Output capacitance
Cob
−
Typ.
−
−
−
−
−
−
−
140
4.0
Max.
−
−
−
−0.1
−0.1
−0.5
560
−
5.0
Unit
V
V
V
µA
µA
V
−
MHz
pF
Conditions
IC=−50µA
IC=−1µA
IE=−50µA
VCB=−60V
VEB=−6V
IC/IB=−50mA/−5mA
VCE=−6V, IC=−1mA
VCE=−12V, IE=2mA, f=30MHz
VCB=−12V, IE=0A, f=1MHz
!Device marking
L2SA1774QT1G=FQ L2SA1774ST1G=FS L2SA1774RT1G=FR
!hFE values are classified as follows:
Item
hFE
Q
120~270
R
180~390
S
270~560
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