L2SA1577PT1G Datasheet, PDF (1/3 Pages) Leshan Radio Company – General Purpose Transistors PNP Silicon

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
F We declare that the material of product compliance with RoHS requirements.
F ORDERING INFORMATION
Device
L2SA1577QT1G Series
L2SA1577QT3G Series
Package
SC-70
SC-70
Shipping
3000/Tape & Reel
10000/Tape & Reel
F Absolute maximum ratings (Ta = 25_C)
L2SA1577QT1G Series
3
1
2
SC-70/SOT– 323
3
COLLECTOR
1
BASE
2
EMITTER
F DEVICE MARKING
L2SA1577PT1G =HP L2SA1577QT1G=HQ L2SA1577RT1G =HR
F _{ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)}
Characteristic
Collector–Emitter Breakdown Voltage
(I_C = –1 mA)
Emitter–Base Breakdown Voltage
(I_E = – 100 µA)
Collector–Base Breakdown Voltage
(I_C = – 100 µA)
Collector Cutoff Current
(V_CB = – 20 V)
Emitter cutoff current
(V_EB = – 4 V)
Collector-emitter saturation voltage
(I_C/ I_B = – 100 mA / – 10m A)
DC current transfer ratio
(V _CE = – 3 V, I _C= –10mA)
Transition frequency
(V _CE = – 5 V, I _E= 20mA, f=100MHz )
Output capacitance
(V _CB = – 10 V, I _E= 0A, f =1MHz )
Symbol
V _(BR)CEO
V _(BR)EBO
V _(BR)CBO
I _CBO
I _EBO
V _CE(sat)
h _FE
f_T
C _ob
Min
– 32
–5
– 40
—
—
—
82
—
—
F h_FE values are classified as follows:
*
P
Q
hFE
82~270
120~270
R
180~390
Typ
Max Unit
—
—
V
—
—
V
—
—
V
—
–1
µA
—
–1
µA
—
-0.4
V
––
390
––
200
––
MHz
7.0
—
pF
Rev.O 1/3