L2SA1365FLT1G_15 Datasheet, PDF (1/3 Pages) LANSDALE Semiconductor Inc. – General Purpose Transistor

LESHAN RADIO COMPANY, LTD.
General Purpose Transistor
DESCRIPTION
L2SA1365 LT1G is a mini packagesilicon PNP epitaxial transistor,
designed with high collector current and small VCE(sat).
.
FEATURE
●Small collector to emitter saturation voltage.
VCE(sat)=-0.2V typ
●Excellent linearity of DC forward current gain.
●Super mini package for easy mounting
●High collector current I_CM=-1A
●High gain band width product f_T =180MHz typ
●We declare that the material of product compliance with RoHS requirements.
●We declare that the material of product is ROHS compliant
●S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements, AEC-Q101 Qualified and PPAP Capable.
L2SA1365*LT1G
S-L2SA1365*LT1G
3
1
2
SOT–23
APPLICATION
Small type motor drive, relay drive, power supply.
MAXIMUM RATINGS（Ta=25℃）
Symbol
Parameter
Ratings
Unit
V_CBO Collector to Base voltage
-25
V
V_CEO Collector to Emitter voltage
-20
V
V_EBO
Emitter to Base voltage
-4
V
I_O
Collector current
-7 00
mA
P_c
Collector dissipation
150
mW
T_j
Junction temperature
＋125
℃
T_stg
Storage temperature
-55～＋125 ℃
3
COLLECTOR
1
BASE
ORDERING INFORMATION
2
EMITTER
Device
Marking
L2SA1365ELT1G
AE
S-L2SA1365ELT1G
L2SA1365ELT3G
AE
S-L2SA1365ELT3G
L2SA1365FLT1G
AF
S-L2SA1365FLT1G
L2SA1365FLT3G
AF
S-L2SA1365FLT3G
L2SA1365GLT1G
AG
S-L2SA1365GLT1G
L2SA1365GLT3G
AG
S-L2SA1365GLT3G
Shipping
3000/Tape & Reel
10000/Tape & Reel
3000/Tape & Reel
10000/Tape & Reel
3000/Tape & Reel
10000/Tape & Reel
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Parameter
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E Saturation Vlotage
Gain bandwidth product
Symbol
Test conditions
V(BR)CBO I _C=-10μA , I _E =0
V(BR)EBO I _E=-10μA , I _C =0
V(BR)CEO I _C=-100μA ,R _BE=∞
ICBO
V _CB=-25V, I _E=0mA
IEBO
V _EB=-2V, I _C=0mA
hFE
V _CE=-4V, I _C=-100mA
※
VCE(sat) I _C=-500mA ,I_B=-25mA
fT
V _CE=-6V, I _E=10mA
※） It shows hFE classification in below table.
Item
ï¼¥
Ｆ
Ｇ
ｈＦＥ Item
150～300 250～500 400～800
Limits
Min Typ
-25
-
-4
-
-20
-
-
-
-
-
150
-
-
-0.2
-
180
Unit
Max
-
V
-
V
-
V
-1
μA
-1
μA
800
-0.5
V
-
MHz
Rev.O 1/3