L2SA1235FLT1G Datasheet, PDF (1/3 Pages) Leshan Radio Company – General Purpose Transistor Super mini package for easy mounting

LESHAN RADIO COMPANY, LTD.
General Purpose Transistor
DESCRIPTION
L2SA1365FLT1G is a mini package silicon PNP epitaxial transistor,
it is designed for low frequency voltage application.
.
FEATURE
●Small collector to emitter saturation voltage.
VCE(sat)=-0.3V max ( @ I c = - 1 0 0 m A , I B = - 1 0 m A )
●Excellent linearity of DC forward current gain.
●Super mini package for easy mounting
●We declare that the material of product compliance with RoHS requirements.
APPLICATION
For Hybrid IC,small type machine low frequency voltage amplify application.
L2SA1235FLT1G
3
1
2
SOT–23
MAXIMUM RATINGS（Ta=25℃）
Symbol
Parameter
Ratings
Unit
V_CBO Collector to Base voltage
-50
V
V_CEO Collector to Emitter voltage
-50
V
V_EBO
Emitter to Base voltage
-6
V
I_O
Collector current
-200
mA
P_c
Collector dissipation
200
mW
T_j
Junction temperature
＋150
℃
T_stg
Storage temperature
-55～＋150 ℃
ORDERING INFORMATION
Device
Marking
Shipping
L2SA1235FLT1G
A5F
3000/Tape & Reel
L2SA1235FLT3G
A5F
10000/Tape & Reel
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Parameter
Symbol
Test conditions
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
C to E Saturation Vlotage
Gain bandwidth product
Collector output capacitance
Noise figure
V(BR)CEO
ICBO
IEBO
hFE
hFE
VCE(sat)
fT
Cob
NF
I _C=-100μA ,R _BE=∞
V _CB=-50V, I _E=0mA
V _EB=-6V, I _C=0mA
V _CE=-6V, I _C=-1mA
※
V _CE=-6V, I _C=-0.1mA
I _C=-100mA ,I_B=-10mA
V _CE=-6V, I _E=10mA
V _CB=-6V, I _E=0,f=1MHz
V _CE=-6V, I _E=0.3mA,f=100Hz,RG=10kΩ
※） It shows hFE classification in below table.
Item
ï¼¥
Ｆ
Ｇ
ｈＦＥ Item
150～300 250～500 400～800
Limits
Unit
Min Typ Max
-50
-
-
V
-
-
-0.1 μA
-
-
-0.1 μA
150
-
800
90
-
-
-
-
-0.3
V
-
200
-
MHz
-
4
-
pF
-
-
20
dB
Rev.O 1/3