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L2SA1037AKRLT1G_15 Datasheet, PDF (1/4 Pages) Leshan Radio Company – S- Prefix for Automotive and Other Applications Requiring Unique Site
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
Features
z We declare that the material of product compliance with RoHS requirements.
zS- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
ORDERING INFORMATION
L2SA1037AKQLT1G Series
S-L2SA1037AKQLT1G Series
3
Device
L2SA1037AKQLT1G
S-L2SA1037AKQLT1G
L2SA1037AKQLT3G
S-L2SA1037AKQLT3G
Package
SOT23
SOT23
Shipping
3000/Tape & Reel
10000/Tape & Reel
1
2
SOT– 23
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector–Emitter Voltage
V CEO
–50
V
Collector–Base Voltage
V CBO
–60
V
Emitter–Base Voltage
V EBO
–6.0
V
Collector Current — Continuous I C
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature
T stg
–150
mAdc
0.2
W
150
°C
-55 ~+150 °C
DEVICE MARKING
1
BASE
L2SA1037AKQLT1G =FQ L2SA1037AKSLT1G=G3F L2SA1037AKRLT1G=FR
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Collector–Emitter Breakdown Voltage
(IC = –1 mA)
Emitter–Base Breakdown Voltage
(IE = – 50 µA)
Collector–Base Breakdown Voltage
(IC = – 50 µA)
Collector Cutoff Current
(VCB = – 60 V)
Emitter cutoff current
(VEB = – 6 V)
Collector-emitter saturation voltage
(IC/ IB = – 50 mA / – 5m A)
DC current transfer ratio
(V CE = – 6 V, I C= –1mA)
Transition frequency
(V CE = – 12 V, I E= 2mA, f=30MHz )
Output capacitance
(V CB = – 12 V, I E= 0A, f =1MHz )
Symbol
V (BR)CEO
V (BR)EBO
V (BR)CBO
I CBO
I EBO
V CE(sat)
h FE
fT
C ob
Min
– 50
–6
– 60
—
—
—
120
—
—
Typ
Max Unit
—
—
V
—
—
V
—
—
V
—
– 0.1 µA
—
– 0.1 µA
—
-0.5
V
––
560
––
140
––
MHz
4.0
5.0
pF
3
COLLECTOR
2
EMITTER
h FE values are classified as follows:
*
Q
R
hFE
120~270
180~390
S
270~560
Rev.O 1/4