L2N7003LT1 Datasheet, PDF (1/3 Pages) Leshan Radio Company – Small Signal MOSFET 115 mAmps, 60 Volts

LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET
115 mAmps, 60 Volts
N–Channel SOT–23
MAXIMUM RATINGS
Rating
Symbol Value Unit
Drain–Source Voltage
Drain–Gate Voltage (R_GS = 1.0 MΩ)
Drain Current
– Continuous T_C = 25°C (Note 1.)
– Continuous T_C = 100°C (Note 1.)
– Pulsed (Note 2.)
V_DSS
V_DGR
I_D
I_D
I_DM
60
60
±ā115
±ā75
±ā800
Vdc
Vdc
mAdc
Gate–Source Voltage
– Continuous
– Non–repetitive (tp ≤ 50 µs)
THERMAL CHARACTERISTICS
V_GS
V_GSM
±ā20
Vdc
±ā40
Vpk
Characteristic
Symbol Max Unit
Total Device Dissipation FR–5 Board
(Note 3.) T_A = 25°C
Derate above 25°C
P_D
225
mW
1.8 mW/°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(Note 4.) TA = 25°C
Derate above 25°C
R_θJA
P_D
556 °C/W
300
mW
mW/°C
2.4
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R_θJA
T_J, T_stg
417
–ā55 to
+150
°C/W
°C
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
3. FR–5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
L2N7002LT1
3
1
2
CASE 318, STYLE 21
SOT– 23 (TO–236AB)
115 mAMPS
60 VOLTS
R _DS(on) = 7.5 W
N - Channel
3
1
2
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
3
702
W
1
2
Gate
Source
702 = Device Code
W
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
2N7002LT1
2N7002LT3
SOT–23 3000 Tape & Reel
SOT–23 10,000 Tape & Reel
L2N7002LT1–1/3