L2N7002WT1G_15 Datasheet, PDF (1/4 Pages) Leshan Radio Company – Small Signal MOSFET

LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET
115 mA, 60 V
N–Channel SOT–323
• ^{We declare that the material of product}
compliance with RoHS requirements.
• ESD Protected:1000V
• S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
MAXIMUM RATINGS
Rating
Symbol Value Unit
Drain–Source Voltage
Drain–Gate Voltage (R_GS = 1.0 MΩ)
Drain Current
– Continuous T_C = 25°C (Note 1.)
– Continuous T_C = 100°C (Note 1.)
– Pulsed (Note 2.)
V_DSS
V_DGR
I_D
I_D
I_DM
60
60
±115
±75
±800
Vdc
Vdc
mAdc
Gate–Source Voltage
– Continuous
– Non–repetitive (tp ≤ 50 µs)
THERMAL CHARACTERISTICS
V_GS
V_GSM
±20
Vdc
±40
Vpk
Characteristic
Symbol Max Unit
Total Device Dissipation FR–5 Board
(Note 3.) T_A = 25°C
Derate above 25°C
P_D
225
mW
1.8 mW/°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(Note 4.) TA = 25°C
Derate above 25°C
R_θJA
P_D
556 °C/W
300
mW
mW/°C
2.4
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R_θJA
T_J, T_stg
417
-55 to
+150
°C/W
°C
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
3. FR–5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
ORDERING INFORMATION
Device
Marking
L2N7002WT1G
S-L2N7002WT1G
6C
L2N7002WT3G
S-L2N7002WT3G
6C
Shipping
3000 Tape & Reel
10000 Tape & Reel
L2N7002WT1G
S-L2N7002WT1G
3
1
2
SOT– 323 (SC-70)
Simplified Schematic
Gate 1
3 Drain
Source 2
(Top View)
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
3
6C
1
2
Gate
Source
6C = Device Code
M
=Month Code
Rev .O 1/4