L2N7002FDW1T1G_15 Datasheet, PDF (1/5 Pages) Leshan Radio Company – Small Signal MOSFET 30Volts

Small Signal MOSFET
30 Volts
N–Channel SC–88
• We declare that the material of product are Halogen Free and
compliance with RoHS requirements.
• ^{S- Prefix for Automotive and Other Applications Requiring}
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
FEATURES
● RDS(ON) ≦8Ω@VGS=4V
● RDS(ON) ≦13Ω@VGS=2.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
● Capable doing Cu wire bonding
● ESD Protected:1000V
APPLICATIONS
● Power Management in Note book
● Portable Equipment
● Battery Powered System
● Load Switch
ORDERING INFORMATION
Device
Marking
Shipping
L2N7002FDW1T1G
72F
S-L2N7002FDW1T1G
3000 Tape & Reel
L2N7002FDW1T3G
72F
S-L2N7002FDW1T3G
10000 Tape & Reel
LESHAN RADIO COMPANY, LTD.
L2N7002FDW1T1G
S-L2N7002FDW1T1G
Simplified Schematic
3
2
1
D₂
G₁
S₁
S₂
G₂
D₁
45
6
(Top View)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board
(Note 1.) T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(Note 2.) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P_D
R_θJA
P_D
R_θJA
T_J, T_stg
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
Max Unit
225
mW
1.8 mW/°C
556
300
2.4
417
-55 to
+150
°C/W
mW
mW/°C
°C/W
°C
Rev .O 1/4