L2N7002DW1T1G_15 Datasheet, PDF (1/6 Pages) Leshan Radio Company – Small Signal MOSFET

LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET
115 mAmps,60 Volts
N–Channel SC-88
• ^{We declare that the material of product are Halogen Free and}
compliance with RoHS requirements.
• ESD Protected:1000V
• S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
MAXIMUM RATINGS
Rating
Drain−Source Voltage
Drain−Gate Voltage (R_GS = 1.0 MW)
Drain Current
− Continuous T_C = 25°C (Note 1)
− Continuous T_C = 100°C (Note 1)
− Pulsed (Note 2)
Gate−Source Voltage
− Continuous
− Non−repetitive (t_p ≤ 50 ms)
Symbol
V_DSS
V_DGR
I_D
I_D
I_DM
Value
60
60
± 115
± 75
± 800
Unit
Vdc
Vdc
mAdc
V_GS
± 20
Vdc
V_GSM
± 40
Vpk
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation
P_D
Per Device
FR−5 Board (Note 1)
T_A = 25°C
Derate Above 25°C
Thermal Resistance,
Junction to Ambient
R_qJA
Junction and Storage
Temperature Range
T_J, T_stg
1. FR−5 = 1.0 x 0.75 x 0.062 in
Max
380
250
3.0
328
−55 to +150
Unit
mW
mW/°C
°C/W
°C
L2N7002DW1T1G
S-L2N7002DW1T1G
3
2
1
D₂
G₁
S₁
S₂
G₂
D₁
45
6
ORDERING INFORMATION
Device
Marking
Shipping
L2N7002DW1T1G
S-L2N7002DW1T1G ⁷⁰²
L2N7002DW1T3G
S-L2N7002DW1T3G ⁷⁰²
3000 Tape & Reel
10000 Tape & Reel
Rev .O 1/4