L2N5401 Datasheet, PDF (1/4 Pages) Leshan Radio Company – Amplifier Transistors PNP Silicon

Amplifier Transistors
ʳ ^{PNP Silicon}
L2N5401
ʳ_ʳ
LESHAN RADIO COMPANY, LTD.
L2N5401
MAXIMUM RATINGS
Rating
Symbol
2N5401
Unit
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
Total Device Dissipation
@ T_A = 25°C
Derate above 25°C
V_CEO
V_CBO
V_EBO
I_C
P_D
150
Vdc
160
Vdc
5.0
Vdc
600
mAdc
625
mW
5.0
mW/°C
Total Device Dissipation
@ T_C = 25°C
Derate above 25°C
P_D
1.5
Watts
12
mW/°C
Operating and Storage Junction
T_J, T_stg
−55 to +150
°C
Temperature Range
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not nor-
mal operating conditions) and are not valid simultaneously. If these limits are ex-
ceeded, device functional operation is not implied, damage may occur and reli-
ability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Ambient
R_qJA
200
°C/W
Thermal Resistance,
Junction−to−Case
R_qJC
83.3
°C/W
123
TO-92
COLLECTOR
3
2
BASE
1
EMITTER
MARKING DIAGRAM
2N5401
YWW
Y
= Year
WW = Work Week
L2N5401-1/4