L1SS356T1G_15 Datasheet, PDF (1/3 Pages) Leshan Radio Company – Band Switching Diode

LESHAN RADIO COMPANY, LTD.
Band Switching Diode
z Applications
High frequency switching
z Features
1) Small surface mounting type.
2) High reliability.
3) We declare that the material of product
compliance with RoHS requirements.
z Construction
Silicon epitaxial planar
z _{S- Prefix for Automotive and Other Applications Requiring}
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
L1SS356T1G
S-L1SS356T1G
1
2
SOD– 323
1
CATHODE
2
ANODE
Ordering Information
Device
L1SS356T1G
S-L1SS356T1G
L1SS356T3G
S-L1SS356T3G
Marking
B
B
Shipping
3000/Tape&Reel
10000/Tape&Reel
Absolute maximum ratings (TA=25^°C)
Parameter
Symbol
Limits
Unit
DC reverse voltage
VR
35
V
DC forward current
IF
Junction temperature
T_j
Storage temperature
Tstg
100
mA
125
°_C
-55~+125
°_C
Electrical characteristics (T_A=25^°C)
Parameter
Symbol Min. Typ. Max. Unit
Forward voltage
VF
–
– 1.0 V
Reverse current
I_R
–
–
10 nA
Capacitance between terminals CT
Forward operating resistance
rF
–
– 1.2 pF
–
–
0.9 Ω
Conditions
IF=10mA
V_R=25V
VR=6V, f =1MHz
IF=2mA, f =100MHz
Rev.O 1/3