L1SS356T1G Datasheet, PDF (1/3 Pages) Leshan Radio Company – L1SS356T1G

LESHAN RADIO COMPANY, LTD.
Band Switching Diode
z Applications
High frequency switching
z Features
1) Small surface mounting type.
2) High reliability.
3) We declare that the material of product
compliance with RoHS requirements.
z Construction
Silicon epitaxial planar
Driver Marking
L1SS356T1G =B
Absolute maximum ratings (TA=25^°C)
Parameter
Symbol
DC reverse voltage
VR
DC forward current
IF
Junction temperature
T_j
Storage temperature
Tstg
Limits
35
100
125
-55~+125
L1SS356T1G
1
2
SOD– 323
1
CATHODE
2
ANODE
Unit
V
mA
°_C
°_C
Electrical characteristics (T_A=25^°C)
Parameter
Symbol Min. Typ. Max. Unit
Forward voltage
VF
–
– 1.0 V
Reverse current
I_R
–
–
10 nA
Capacitance between terminals CT
–
– 1.2 pF
Forward operating resistance
rF
–
– 0.9 Ω
Conditions
IF=10mA
V_R=25V
VR=6V, f =1MHz
IF=2mA, f =100MHz
Ordering Information
Device
L1SS356T1G
L1SS356T3G
Marking
B
B
Shipping
3000/Tape&Reel
10000/Tape&Reel
1/3