HVC369B Datasheet, PDF (1/2 Pages) Hitachi Semiconductor – Variable Capacitance Diode for VCO

LESHAN RADIO COMPANY, LTD.
Variable Capacitance Diode
for VCO
FEATURES
• Low capacitance and to be usable at GHz.
• High capacitance ratio. (n = 2.3 min)
• Low series resistance. (rs = 0.5 Ωmax)
• Ultra small Flat Package (UFP) is suitable for surface mount
design.
1
CATHODE
2
ANODE
HVC369B
1
2
SOD– 523
DEVICE MARKING
HVC369B = B3
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Item
Symbol
Value
Unit
Reversevoltage
VR
15
V
Junction temperature
Storage temperature
Notes 1.RL=10kΩ
Tj
125
°C
Tstg
– 55 to +125
°C
ELECTRICALCHARACTERISTICS (TA = 25°C)
Item
Symbol Min Typ
Reverse current
Capacitance
IR1
–
–
IR2
–
–
C1
4.65
–
C4
1.85
–
Capacitance ratio
n
2.3
–
Series resistance
rs
–
–
Max Unit
10
nA
100
5.15 pF
2.15
–
–
0.5
Ω
Test Condition
VR = 15V
VR = 15V, TA = 60°C
VR = 1V, f = 1 MHz
VR = 4V, f = 1 MHz
C1/ C4
VR=1V, f = 470 MHz
HVC369B–1/2