HVC362 Datasheet, PDF (1/2 Pages) Hitachi Semiconductor – Variable Capacitance Diode for VCO

LESHAN RADIO COMPANY, LTD.
Variable Capacitance Diode
for VCO
FEATURES
• High capacitance ratio. (n =3.0.min)
• Good C-V linearity.
• Ultra small Flat Package (UFP) is suitable for surface mount
design.
HVC362
1
2
SOD– 523
1
CATHODE
2
ANODE
DEVICE MARKING
HVC362 = V2
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Item
Symbol
Value
Unit
Reversevoltage
VR
15
V
Junction temperature
Storage temperature
Notes 1.RL=10kΩ
Tj
125
°C
Tstg
– 55 to +125
°C
ELECTRICALCHARACTERISTICS (TA = 25°C)
Item
Symbol Min Typ
Reverse current
Capacitance
IR1
–
–
IR2
–
–
C1
41.6
–
C4
10.1
–
Capacitance ratio
n
3.0
–
Series resistance
ESD-Capability^*1
rs
–
–
–
80
–
Notes
1.
Failure
criterion
;
I
R
≥
20nA
at
V
R
=10
V
Max Unit
10
nA
100
49.9 pF
14.8
–
–
2.0
Ω
–
V
Test Condition
VR = 10V
VR = 10V, TA = 60°C
VR = 1V, f = 1 MHz
VR = 4V, f = 1 MHz
C1/ C4
VR=4V, f = 100 MHz
*C =200pF ,Both forward
and reverse direction
1 pulse.
HVC362–1/2