HVC359 Datasheet, PDF (1/2 Pages) Hitachi Semiconductor – Variable Capacitance Diode for VCXO

LESHAN RADIO COMPANY, LTD.
Variable Capacitance Diode
for VCXO
FEATURES
• High capacitance ratio and good C-V linearity.
• To be usable at low voltage.
• Ultra small Flat Package (UFP) is suitable for surface mount
design.
1
CATHODE
2
ANODE
HVC359
1
2
SOD– 523
DEVICE MARKING
HVC359 = S
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Item
Symbol
Value
Unit
Reversevoltage
Junction temperature
VR
15
V
Tj
125
°C
Storage temperature
Tstg
– 55 to +125
°C
ELECTRICALCHARACTERISTICS (TA = 25°C)
Item
Symbol Min Typ
Reverse current
IR1
–
–
IR2
–
–
Capacitance
C1
24.8
–
Capacitance ratio
C4
6.0
–
n
3.0
–
Series resistance
ESD-Capability^*1
rs
–
–
–
80
–
Max Unit
10
nA
100
29.8 pF
8.3
–
–
1.5
Ω
–
V
Notes 1. Failure criterion ; I_R ≥ 20nA at V_R =10 V
Test Condition
VR = 10V
VR = 10V, TA = 60°C
VR = 1V, f = 1 MHz
VR = 4V, f = 1 MHz
C1/ C4
VR = 4V, f = 100 MHz
C =200pF , Both forward
and reverse direction
1 pulse.
HVC359–1/2