HVC358B Datasheet, PDF (1/2 Pages) Hitachi Semiconductor – Variable Capacitance Diode for VCO

LESHAN RADIO COMPANY, LTD.
Variable Capacitance Diode
for VCO
FEATURES
• High capacitance ratio. (n =2.20.min)
• Low series resistance. (r_s=0.4Ωmax)
• Good C-V linearity.
• Ultra small Flat Package (UFP) is suitable for surface mount
design.
1
CATHODE
2
ANODE
HVC358B
1
2
SOD– 523
DEVICE MARKING
HVC358B = B2
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Item
Symbol
Value
Unit
Reversevoltage
Junction temperature
VR
15
V
Tj
125
°C
Storage temperature
Tstg
– 55 to +125
°C
ELECTRICALCHARACTERISTICS (TA = 25°C)
Item
Symbol Min Typ
Reverse current
IR1
–
–
IR2
–
–
Capacitance
C1
19.5
–
Capacitance ratio
C4
8.00
–
n
2.20
–
Series resistance
rs
–
–
Max Unit
10
nA
100
21.0 pF
9.30
–
–
0.4
Ω
Test Condition
VR = 15V
VR = 15V, TA = 60°C
VR = 1V, f = 1 MHz
VR = 4V, f = 1 MHz
C1/ C4
VR = 1V, f = 470 MHz
HVC358B–1/2