BSS64LT1 Datasheet, PDF (1/2 Pages) Motorola, Inc – Driver Transistor(NPN)

LESHAN RADIO COMPANY, LTD.
Driver Transistors
NPN Silicon
3
COLLECTOR
1
BASE
MAXIMUM RATINGS
2
EMITTER
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
V _CEO
V
CBO
V _EBO
IC
THERMAL CHARACTERISTICS
Value
80
120
5.0
100
Unit
Vdc
Vdc
Vdc
mAdc
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
Symbol
P_D
R_θJA
P_D
R_θJA
T_J , T_stg
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
mW/°C
417
–55 to +150
°C/W
°C
BSS64LT1 = AM
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I _C = 4.0 mAdc )
Collector–Base Breakdown Voltage
(I _C = 100 µAdc )
Emitter–Base Breakdown Voltage
(I ^E = 100 µAdc )
V _(BR)CEO
80
—
V _(BR)CBO
120
—
V _(BR)EBO
5.0
—
Collector Cutoff Current
( V _CB = 90 Vdc )
I _CBO
—
0.1
( T _A = 150°C )
Emitter Cutoff Current
( V _EB = 4.0Vdc )
1. FR–5 = 1.0 x 0.75 x 0.062 in.
—
500
I _EBO
—
200
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company.
BSS64LT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
Unit
Vdc
Vdc
Vdc
nAdc
nAdc
M40–1/2