BSS63LT1 Datasheet, PDF (1/2 Pages) Motorola, Inc – High Voltage Transistor(PNP)

LESHAN RADIO COMPANY, LTD.
High Voltage Transistors
PNP Silicon
3
COLLECTOR
1
BASE
2
EMITTER
BSS63LT1
3
1
2
CASE 318–08, STYLE 6
SOT– 23 (TO–236AB)
MAXIMUM RATINGS
Rating
Collector– Emitter Voltage
Collector– Emitter Voltage (R _BE = 10 kΩ)
Collector Current — Continuous
DEVICE MARKING
Symbol
V _CEO
V _CER
I_C
Value
–100
–110
–100
Unit
Vdc
Vdc
mAdc
BSS63LT1 = T1
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Total Device Dissipation FR– 5 Board, (1)
T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
P_D
R _θJA
P_D
R _θJA
T _J , T _stg
225
1.8
556
300
2.4
417
–55 to +150
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted.)
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Characteristic
Symbol
Min
Typ
Collector–Emitter Breakdown Voltage
(I_C = –100 µA)
V _(BR)CEO
– 100
—
Collector–Emitter Breakdown Voltage
(I_C = –10 µAdc , I _E =0, R _BE =10 kΩ )
V _(BR)CER
– 110
—
Collector–Base Breakdown Voltage
(I_E = – 10 µAdc, I _E =0 )
V _(BR)CBO
– 110
—
Emitter –Base Breakdown Voltage
(I_E = – 10 µA)
V _(BR)CBO
– 6.0
—
Collector Cutoff Current
(V_CB = – 90 Vdc, I _E =0 )
I _CBO
—
—
Collector Cutoff Current
(V_CB = – 110 Vdc, R _BE =10 kΩ )
I _CER
—
—
Emitter Cutoff Current
(V_EB = – 6.0 Vdc, I _C = 0 )
I _EBO
—
—
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company.
Max Unit
—
Vdc
—
Vdc
—
Vdc
—
Vdc
– 100 µAdc
– 10 µAdc
– 200 µAdc
M39–1/2