BCW69LT1 Datasheet, PDF (1/6 Pages) Motorola, Inc – General Purpose Transistors

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Emitter–Base Voltage
V _CEO
V _EBO
Collector Current — Continuous I _C
1
BASE
3
COLLECTOR
2
EMITTER
Value
– 45
– 5.0
– 100
Unit
Vdc
Vdc
mAdc
BCW69LT1
BCW70LT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P_D
R_θJA
P_D
R_θJA
T_J , T_stg
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
mW/°C
417
–55 to +150
°C/W
°C
DEVICE MARKING
BCW69LT1 = H1; BCW70LT1 = H2,
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (I_C = –2.0 mAdc, I_B = 0 )
Collector–Emitter Breakdown Voltage (I_C = –100 µAdc, V _EB = 0 )
Emitter–Base Breakdown Voltage (I _E= –10 µAdc, I _C = 0)
Collector Cutoff Current
(V_CE = –20 Vdc, I _E = 0 )
(V_CE = –20 Vdc, I _E = 0 , T_A = 100°C)
1. FR– 5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V _(BR)CEO
V _(BR)CES
V _(BR)EBO
I _CEO
Min
Max
Unit
– 45
—
Vdc
– 50
—
Vdc
– 5.0
—
Vdc
—
– 100
nAdc
—
– 10
µAdc
M13–1/6