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BCW68GLT1 Datasheet, PDF (1/2 Pages) Motorola, Inc – General Purpose Transistor | |||
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LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
3
COLLECTOR
1
BASE
MAXIMUM RATINGS
Rating
Symbol
CollectorâEmitter Voltage
V CEO
CollectorâBase Voltage
V CBO
EmitterâBase Voltage
V EBO
Collector Current â Continuous I C
Value
â 45
â 60
â 5.0
â 800
2
EMITTER
Unit
Vdc
Vdc
Vdc
mAdc
BCW68GLT1
3
1
2
CASE 318â08, STYLE 6
SOTâ23 (TOâ236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FRâ 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
RθJA
PD
RθJA
TJ , Tstg
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
mW/°C
417
â55 to +150
°C/W
°C
DEVICE MARKING
BCW68GLT1 = DH
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
CollectorâEmitter Breakdown Voltage (IC = â10 mAdc, IB = 0 )
CollectorâEmitter Breakdown Voltage (IC = â10 µAdc, VEB = 0 )
EmitterâBase Breakdown Voltage (I E= â10 µAdc, I C = 0)
Collector Cutoff Current
(VCE = â45 Vdc, I E= 0 )
(VCE = â45 Vdc, I B= 0 , TA = 150°C)
Emitter Cutoff Current (VEB = â 4.0 Vdc, I C = 0)
1. FRâ 5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V (BR)CEO
V (BR)CES
V (BR)EBO
I CES
I EBO
Min
â 45
â 60
â 5.0
â
â
â
Typ Max Unit
â â Vdc
â â Vdc
â â Vdc
â â 20 nAdc
â â 10 µAdc
â â 20 nAdc
M12â1/2
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