BCW65ALT1 Datasheet, PDF (1/2 Pages) Motorola, Inc – General Purpose Transistor

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
3
COLLECTOR
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V _CEO
Collector–Base Voltage
V _CBO
Emitter–Base Voltage
V _EBO
Collector Current — Continuous I _C
1
BASE
Value
32
60
5.0
800
2
EMITTER
Unit
Vdc
Vdc
Vdc
mAdc
BCW65ALT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P_D
R_θJA
P_D
R_θJA
T_J , T_stg
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
mW/°C
417
–55 to +150
°C/W
°C
DEVICE MARKING
BCW65ALT1 = EA
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
V _(BR)CEO
32
—
(I_C = 10mAdc, I _B= 0 )
Collector–Emitter Breakdown Voltage
V _(BR)CES
60
—
(I_C = 10 µAdc, V _EB = 0 )
Emitter–Base Breakdown Voltage
(I _E= 10 µAdc, I _C = 0)
V _(BR)EBO
5.0
—
Collector Cutoff Current
I _CES
(V_CE = 32 Vdc, I_E = 0 )
—
—
(V_CE = 32 Vdc, I_E = 0 , T_A = 150°C)
—
—
Emitter Cutoff Current
(V _EB= 4.0 Vdc, I _C = 0)
I _EBO
—
—
1. FR– 5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Max
Unit
—
Vdc
—
Vdc
—
Vdc
20
nAdc
20
µAdc
20
nAdc
M11–1/2