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BCW61BLT1 Datasheet, PDF (1/6 Pages) Motorola, Inc – General Purpose Transistors | |||
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LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
1
BASE
MAXIMUM RATINGS
Rating
Symbol
CollectorâEmitter Voltage
CollectorâBase Voltage
V CEO
V CBO
EmitterâBase Voltage
V EBO
Collector Current â Continuous I C
Value
â 32
â 32
â 5.0
â 100
3
COLLECTOR
2
EMITTER
Unit
Vdc
Vdc
Vdc
mAdc
BCW61BLT1
BCW61CLT1
BCW61DLT1
3
1
2
CASE 318â08, STYLE 6
SOTâ23 (TOâ236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FRâ 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
RθJA
PD
RθJA
TJ , Tstg
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
mW/°C
417
â55 to +150
°C/W
°C
DEVICE MARKING
BCW61BLT1 = BB, BCW61CLT1 = BC, BCW61DLT1 = BD
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
CollectorâEmitter Breakdown Voltage
(IC = â2.0 mAdc, IB = 0 )
EmitterâBase Breakdown Voltage
(I E= â1.0 µAdc, I C = 0)
Collector Cutoff Current
(VCE = â32 Vdc, )
(VCE = â32 Vdc, TA = 150°C)
V (BR)CEO
V (BR)EBO
I CES
â 32
â 5.0
â
â
1. FRâ 5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Max
Unit
â
Vdc
â
Vdc
â20
nAdc
â20
µAdc
M10â1/6
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