BCW33LT1 Datasheet, PDF (1/6 Pages) Motorola, Inc – General Purpose Transistor

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
3
COLLECTOR
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
V _CEO
V _CBO
V _EBO
I_C
1
BASE
2
EMITTER
Value
20
30
5.0
100
Unit
Vdc
Vdc
Vdc
mAdc
BCW33LT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P_D
R_θJA
P_D
R_θJA
T_J , T_stg
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
mW/°C
417
–55 to +150
°C/W
°C
DEVICE MARKING
BCW33LT1 = D3
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I_C = 2.0mAdc, I _B= 0 )
Collector–Base Breakdown Voltage
(I _C = 10 µAdc, I _B = 0)
Emitter–Base Breakdown Voltage
(I
=
E
10
µAdc,
I
C
=
0)
Collector Cutoff Current
(V_CB = 32 Vdc, I_E = 0 )
(V_CB = 32 Vdc, I_E = 0, T_A = 100°C)
V _(BR)CEO
32
V _(BR)CBO
32
V _(BR)EBO
5.0
I _CBO
—
—
1. FR– 5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Max
Unit
—
Vdc
—
Vdc
—
Vdc
100
nAdc
10
µAdc
M8–1/6