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BCW29LT1 Datasheet, PDF (1/6 Pages) Motorola, Inc – General Purpose Transistors | |||
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LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
3
COLLECTOR
MAXIMUM RATINGS
Rating
Symbol
CollectorâEmitter Voltage
CollectorâBase Voltage
EmitterâBase Voltage
Collector Current â Continuous
V CEO
V CBO
V EBO
IC
2
BASE
Value
â32
â32
â5.0
â100
1
EMITTER
Unit
Vdc
Vdc
Vdc
mAdc
BCW29LT1
BCW30LT1
3
1
2
CASE 318â08, STYLE 6
SOTâ23 (TOâ236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FRâ 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
RθJA
PD
RθJA
TJ , Tstg
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
mW/°C
417
â55 to +150
°C/W
°C
DEVICE MARKING
BCW29LT1 = C1; BCW30LT1 = C2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
CollectorâEmitter Breakdown Voltage
(IC = â2.0mAdc, IE = 0 )
CollectorâEmitter Breakdown Voltage
(I C = â100 µAdc, V EB = 0)
CollectorâEmitter Breakdown Voltage
(I C = â10 µAdc, I C = 0)
EmitterâBase Breakdown Voltage
(I E = â10 µAdc, I C = 0)
Collector Cutoff Current
(VCB = â32 Vdc, IE = 0 )
(VCB = â32 Vdc, IE = 0, TA = 100°C)
V (BR)CEO
V (BR)CES
V (BR)CBO
V (BR)EBO
I CBO
â32
â32
â32
â5.0
â
â
1. FRâ5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Max
Unit
â
Vdc
â
Vdc
â
Vdc
â
Vdc
â100
â10
nAdc
µAdc
M7â1/6
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