BC857BRLT1 Datasheet, PDF (1/3 Pages) Leshan Radio Company – General Purpose Transistors(PNP Silicon)

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
1
BASE
3
COLLECTOR
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector–Emitter Voltage
V _CEO
Collector–Base Voltage
V _CBO
Emitter–Base Voltage
V _EBO
Collector Current — Continuous I _C
Collector power dissipation
P_C
Junction temperature
T_j
Storage temperature
T _stg
–50
V
–60
V
–6.0
V
–150
mAdc
0.2
W
150
°C
-55 ~+150 °C
DEVICE MARKING
BC857BRLT1 =G3F
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted.)
Characteristic
Collector–Emitter Breakdown Voltage
(I_C = –1 mA)
Emitter–Base Breakdown Voltage
(I_E = – 50 µA)
Collector–Base Breakdown Voltage
(I_C = – 50 µA)
Collector Cutoff Current
(V_CB = – 60 V)
Emitter cutoff current
(V_EB = – 6 V)
Collector-emitter saturation voltage
(I_C/ I_B = – 50 mA / – 5m A)
DC current transfer ratio
(V _CE = – 6 V, I _C= –1mA)
Transition frequency
(V _CE = – 12 V, I _E= 2mA, f=30MHz )
Output capacitance
(V _CB = – 12 V, I _E= 0A, f =1MHz )
Symbol
V _(BR)CEO
V _(BR)EBO
V _(BR)CBO
I _CBO
I _EBO
V _CE(sat)
h _FE
f_T
C _ob
Min
– 50
–6
– 60
—
—
—
120
—
—
h _FE values are classified as follows:
*
Q
R
hFE
120~270
180~390
S
270~560
BC857BRLT1
is LRC prefered Device
3
1
2
CASE 318–08, STYLE 6
SOT– 23 (TO–236AB)
Typ
Max Unit
—
—
V
—
—
V
—
—
V
—
– 0.1 µA
—
– 0.1 µA
—
-0.5
V
––
560
––
140
––
MHz
4.0
5.0
pF
M35–1/3