BC856AWT1 Datasheet, PDF (1/5 Pages) Motorola, Inc – CASE 419-02, STYLE 3 SOT-323/SC-70

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
These transistors are designed for general purpose
amplifier applications. They are housed in the SOT–323/
SC–70 which is designed for low power surface mount
applications.
1
BASE
3
COLLECTOR
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V _CEO
Collector–Base Voltage
V _CBO
Emitter–Base Voltage
V _EBO
Collector Current — Continuous I _C
2
EMITTER
BC856
–65
–80
–5.0
–100
BC857
–45
–50
–5.0
–100
BC858
–30
–30
–5.0
–100
Unit
V
V
V
mAdc
BC856AWT1, BWT1
BC857AWT1, BWT1
BC858AWT1, BWT1
CWT1
3
1
2
CASE 419–02, STYLE 3
SOT– 323 / SC-70
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T_A = 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P_D
R _θJA
T _J , T _stg
Max
Unit
150
mW
833
–55 to +150
°C/W
°C
DEVICE MARKING
BC856AWT1 = 3A; BC856BWT1 = 3B; BC857AWT1 = 3E; BC857BWT1 = 3F;
BC858AWT1 = 3J; BC858BWT1 = 3K; BC858CWT1 = 3L
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage BC856 Series
(I_C = –10 mA)
BC857 Series
BC858 Series
Collector–Emitter Breakdown Voltage BC856 Series
(I_C = –10 µA, V_EB = 0)
BC857 Series
BC858 Series
Collector–Base Breakdown Voltage BC856 Series
(I_C = – 10 µA)
BC857 Series
BC858 Series
Emitter–Base Breakdown Voltage BC856 Series
(I_E = – 1.0 µA)
BC857 Series,
BC858 Series
Collector Cutoff Current (V_CB = – 30 V)
(V_CB = – 30 V, T_A = 150°C)
1.FR–5=1.0 x 0.75 x 0.062in
– 65
—
—
V _(BR)CEO
– 45
—
—
v
– 30
—
—
– 80
—
—
V _(BR)CES
– 50
—
—
v
– 30
—
—
– 80
—
—
V _(BR)CBO
– 50
—
—
v
– 30
—
—
– 5.0
—
—
V _(BR)EBO
– 5.0
—
—
v
– 5.0
—
—
I _CBO
—
—
– 15 nA
—
—
– 4.0 µA
K5–1/5