BC846AWT1 Datasheet, PDF (1/4 Pages) Motorola, Inc – CASE 419-02, STYLE 3 SOT-323/SC-70

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–323/SC–70 which is
designed for low power surface mount applications.
3
COLLECTOR
1
BASE
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V _CEO
Collector–Base Voltage
V _CBO
Emitter–Base Voltage
V _EBO
Collector Current — Continuous I _C
2
EMITTER
BC846
65
80
6.0
100
BC847
45
50
6.0
100
BC848
30
30
5.0
100
Unit
V
V
V
mAdc
BC846AWT1,BWT1
BC847AWT1,BWT1
CWT1
BC848AWT1,BWT1
CWT1
3
1
2
CASE 419–02, STYLE 3
SOT–323 /SC–70
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T_A = 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Junction and Storage Temperature
Symbol
P_D
R _θJA
P_D
T _J , T _stg
Max
Unit
150
mW
833
2.4
–55 to +150
°C/W
mW/°C
°C
DEVICE MARKING
BC846AWT1 = 1A; BC846BWT1 = 1B; BC847AWT1 = 1E; BC847BWT1 = 1F;
BC847CWT1 = 1G; BC848AWT1 = 1J; BC848BWT1 = 1K; BC848CWT1 = 1L
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
BC846 Series
(I_C = 10 mA)
BC847 Series
BC848 Series
Collector–Emitter Breakdown Voltage
BC846 Series
(I_C = 10 µA, V_EB = 0)
BC847 Series
BC848 Series
Collector–Base Breakdown Voltage BC846 Series
(I_C = 10 µA)
BC847 Series
BC848 Series
Emitter–Base Breakdown Voltage BC846 Series
(I_E = 1.0 µA)
BC847 Series,
BC848 Series
Collector Cutoff Current (V_CB = 30 V)
(V_CB = 30 V, T_A = 150°C)
1.FR–5=1.0 x 0.75 x 0.062in
65
V _(BR)CEO
45
30
80
V _(BR)CES
50
30
80
V _(BR)CBO
50
30
6.0
V _(BR)EBO
6.0
5.0
I _CBO
—
—
Typ
Max Unit
—
—
—
—
v
—
—
—
—
—
—
v
—
—
—
—
—
—
v
—
—
—
—
—
—
v
—
—
—
15
nA
—
5.0
µA
K4–1/4