BC817-16WT1 Datasheet, PDF (1/2 Pages) Leshan Radio Company – General Purpose Transistors NPN Silicon

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
3
COLLECT OR
BC817-16WT1
BC817-40YLT1 is LRC
Preferred Device
1
B ASE
3
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
V_CEO
V_CBO
V_EBO
Collector current-continuoun
IC
THERMAL CHARATEERISTICS
Characteristic
Total Device Dissipation FR-5 Board, (1)
T_A=25^oC
Derate above 25^oC
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA=25 ^oC
Derate above 25^oC
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
BC817-16WT1=6A
2
EMIT T ER
Value
45
50
5
500
Unit
V
V
V
mAdc
Symbol
P_D
Max
225
1.8
R_θJA
556
P_D
300
R_θJA
Tj ,Tstg
2.4
417
-55 to +150
Unit
mW
mW/^oC
o_C/W
mW
mW/^oC
o_C/W
o_C
1
2
CASE 419-02, STYLE 2
SOT-323 (SC-70)
ELECTRICAL CHARACTERISTICS (TA=25^oC unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (1)
(IC=10mA)
Collector-Emitter Breakdown Voltage
(IC=10µ A)
Emitter-Base Breakdown Voltage
(IE=10µ A)
Collector Cutoff Current (VCB=30V)
Emitter Cutoff Current (VBE=7V)
V(BR)CEO
45
-
-
V
V(BR)CES
50
V(BR)EBO
5
-
-
V
ICBO
IEBO
-
-
100
nA
100
nA
BC817-16WT1–1/2