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BC817-16LT1 Datasheet, PDF (1/2 Pages) ON Semiconductor – General Purpose Transistors(NPN Silicon) | |||
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LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
3
COLLECTOR
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
CollectorâEmitter Voltage
CollectorâBase Voltage
EmitterâBase Voltage
V CEO
V CBO
V EBO
Collector Current â Continuous I C
Value
45
50
5.0
500
Unit
V
V
V
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FRâ 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R θJA
PD
R θJA
T J , T stg
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
2.4
417
â55 to +150
mW
mW/°C
°C/W
°C
DEVICE MARKING
BC817â16LT1 = 6A; BC817â25LT1 = 6B; BC817â40LT1 = 6C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
CollectorâEmitter Breakdown Voltage
(IC = â10 mA)
CollectorâEmitter Breakdown Voltage
(VEB = 0, IC = â10 µA)
EmitterâBase Breakdown Voltage
(I E = â1.0 µA)
Collector Cutoff Current
(VCB = 20 V)
(VCB = 20 V, TA = 150°C)
1. FRâ5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V (BR)CEO
V (BR)CES
V (BR)EBO
I CBO
45
â
50
â
5.0
â
â
â
â
â
BC817-16LT1
BC817-25LT1
BC817-40LT1
3
1
2
CASE 318â08, STYLE 6
SOTâ23 (TOâ236AB)
Max
Unit
â
V
â
V
â
V
100
nA
5.0
µA
M2â1/2
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