BB149 Datasheet, PDF (1/2 Pages) NXP Semiconductors – UHF variable capacitance diode

LESHAN RADIO COMPANY, LTD.
UHF variable capacitance diode
FEATURES
· Excellent linearity
· Excellent matching to 1% DMA
· Very small plastic SMD package
· C28: 2.1 pF; ratio 9
· Low series resistance.
APPLICATIONS
· Electronic tuning in UHF television
tuners
· VCO.
DESCRIPTION
The BB149 is a variable capacitance diode,
fabricated in planar technology, and encap-
sulated in the SOD323 very small plastic SMD
package.
The excellent matching performance is
achieved by gliding matching and a direct
matching assembly procedure. The unmatched
type, BB159 has the same specification.
1
CATHODE
2
ANODE
BB 149
1
2
SOD– 323
MARKING CODE:P9
1
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
MIN.
MAX.
VR
continuous reverse voltage
–
30
IF
continuous forward current
–
20
Tstg
storage temperature
–55
+150
Tj
operating junction temperature
–55
+125
UNIT
V
mA
°C
°C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
IR
reverse current
VR = 30 V; see Fig.2
VR = 30 V; Tj = 85 °C; see Fig.2
rs
diode series resistance f = 470 MHz; note 1
Cd
diode capacitance
VR = 0.5 V; f = 1 MHz; see Figs 1 and 3
VR = 28 V;f = 1 MHz; see Figs 1 and 3
Cd( 1V ) capacitance ratio
f = 1 MHz
Cd (28V )
Cd( 19V ) capacitance ratio
f = 1 MHz
Cd (28V )
∆Cd capacitance matching VR = 0.5 to 28 V; in a sequence of 4 diodes
Cd
(gliding)
VR= 0.5 to 28 V; in a sequence of 15 diodes
(gliding)
Note
1. VR is the value at which Cd = 9 pF.
MIN.
–
–
–
18
1.9
8.2
MAX. UNIT
10 nA
200 nA
0.75 Ω
19.5 pF
2.25 pF
10
1.2
–
–
1%
–
2%
BB149–1/2