BB145 Datasheet, PDF (1/2 Pages) NXP Semiconductors – Low-voltage variable capacitance diode

LESHAN RADIO COMPANY, LTD.
Low-voltage variable capacitance diode
FEATURES
· Ultra small plastic SMD package
· C4: 3 pF; ratio: 2.1
· Low series resistance.
APPLICATIONS
· Voltage controlled oscillators (VCO).
DESCRIPTION
The BB145 is a planar technology variable capacitance diode in a SOD523 (SC-79)
package.
BB 145
1
2
SOD523 SC-79
1
CATHODE
2
ANODE
MARKING CODE:U
1
2
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VR
continuous reverse voltage
V RM
peak reverse voltage
in series with a 10 kΩ resistor
IF
continuous forward current
T stg
storage temperature
Tj
operating junction temperature
MIN.
–
–
–
–55
–55
MAX.
6
8
20
+150
+150
UNIT
V
V
mA
°C
°C
ELECTRICAL CHARACTERISTICS T j =25°C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
IR
reverse current
V R = 6 V; see Fig.2
V R =6 V; T j =85°C; see Fig.2
rs
diode series resistance
f = 470 MHz; V R =1 V
Cd
diode capacitance
V R = 1 V; f = 1 MHz;
see Figs 1 and 3
V R = 4 V; f = 1 MHz;
see Figs 1 and 3
C d ( 1V)
C d ( 4V)
capacitance ratio
f = 1 MHz
MIN.
–
–
–
6.4
2.75
2
TYP.
–
–
–
–
–
–
MAX.
10
200
0.6
7.4
UNIT
nA
nA
Ω
pF
3.25 pF
–
BB145–1/2