BAW56LT1 Datasheet, PDF (1/2 Pages) Motorola, Inc – Monolithic Dual Switching Diode Common Anode

LESHAN RADIO COMPANY, LTD.
Monolithic Dual Switching Diode
Common Anode
BAW56LT1
3
ANODE
1
CATHODE
2
CATHODE
3
1
2
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol Value
Unit
Reverse Voltage
Forward Current
Peak Forward Surge Current
VR
IF
I FM(surge)
70
Vdc
200
mAdc
500
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol Max
Unit
Total Device Dissipation FR- 5 Board (1)
T A = 25 °C
erate above 25 °C
PD
225
mW
1.8
mW /°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, ⁽²⁾ T A = 25 °C
Derate above 25 °C
R θJA
556
°C/W
PD
300
mW
2.4
mW /°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R θJA
417
°C/W
T J , T stg -55 to +150 °C
DEVICE MARKING
BAW56LT1 = A1
ELECTRICAL CHARACTERISTICS (T A = 25 °C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I (BR) = 100 µAdc)
Reverse Voltage Leakage Current
(V R = 25 Vdc, T J = 150 °C)
(V R = 70 Vdc)
(V R = 70 Vdc, T J = 150 °C)
Diode Capacitance
(V R = 0, f = 1.0 MHz)
Forward Voltage
(I F = 1.0 mAdc)
(I F = 10 mAdc)
(I F = 50 mAdc)
(I F = 150 mAdc)
Reverse Recovery Time
(I F = I R = 10 mAdc, I R(REC) = 1.0 mAdc) (Figure 1) R L = 100Ω
1. FR-5 = 1.0 x 0.75 x 0.062 in.
V (BR)
IR
CD
VF
t rr
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
CASE 318–08, STYLE12
SOT– 23 (TO–236AB)
Min
Max
Unit
70
–
Vdc
µAdc
–
30
–
2.5
–
50
–
2.0
pF
mVdc
–
715
–
855
–
1000
–
1250
–
6.0
ns
G13–1/2