BAW156LT1 Datasheet, PDF (1/2 Pages) Leshan Radio Company – Monolithic Dual Switching Diode

LESHAN RADIO COMPANY, LTD.
Monolithic Dual Switching Diode
This switching diode has the following features:
• Low Leakage Current Applications
• Medium Speed Switching Times
• Available in 8mm Tape and Reel
Use BAW156LT1 to order the 7 inch/3,000 unit reel
Use BAW156LT3 to order the 13inch/10,000 unit reel
ANODE
3
CATHODE
1
2
ANODE
BAW156LT1
3
1
2
CASE 318–08, STYLE12
SOT– 23 (TO–236AB)
MAXIMUM RATINGS
Rating
Symbol
Value
Reverse Voltage
Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
V_R
I_F
I _FM(surge)
70
200
500
Characteristic
Symbol
Max
Total Device Dissipation FR– 5 Board ⁽¹⁾
T _A = 25°C
Derate above 25°C
P_D
225
1.8
Thermal Resistance, Junction to Ambient
R _{θ JA}
556
Total Device Dissipation
P_D
300
Alumina Substrate, ⁽²⁾ T _A = 25°C
Derate above 25°C
2.4
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
R _{θ JA}
T _J , T _stg
417
–55 to +150
BAW156LT1 = JZ
ELECTRICAL CHARACTERISTICS (T _A = 25°C unless otherwise noted)(EACH DIODE)
Characteristic
Symbol
Min
Max
OFF CHARACTERISTICS
Reverse Breakdown Voltage(I _(BR) = 100 µAdc)
Reverse Voltage Leakage Current
(V _R = 70 Vdc)
(V _R = 70 Vdc,T _J=150°C)
Diode Capacitance(V_R=0V,f=1.0MHz)
Forward Voltage
V _(BR)
70
—
I_R
—
5.0
—
80
C_D
—
2.0
(I _F = 1.0 mAdc)
(I _F = 10 mAdc)
(I _F = 50 mAdc)
(I _F = 150 mAdc)
Reverse Recovery Time
(I _F = I _R = 10 mAdc) (Figure 1)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
V_F
—
900
—
1000
—
1100
—
1250
t _rr
—
3.0
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Unit
Vdc
mAdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Unit
Vdc
nAdc
pF
mVdc
µs
G14–1/2