BAV74LT1 Datasheet, PDF (1/2 Pages) Motorola, Inc – Monolithic Dual Switching Diode

LESHAN RADIO COMPANY, LTD.
Monolithic Dual Switching Diode
BAV74LT1
3
CATHODE
1
ANODE
2
ANODE
3
1
2
CASE 318–08, STYLE 9
SOT–23 (TO–236AB)
DEVICE MARKING
BAV74LT1 = JA
MAXIMUM RATINGS (EACH DIODE)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board (1)
T _A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T _A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
V_R
I_F
I _FM(surge)
Symbol
P_D
R _θJA
P_D
R _θJA
T _J , T _stg
Value
50
200
500
Max
225
1.8
556
300
2.4
417
–55 to +150
Unit
Vdc
mAdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (T _A = 25°C unless otherwise noted) ( EACH DIODE )
Characteristic
Symbol
Min
Max
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I _(BR) = 5.0 µAdc)
V _(BR)
50
—
Reverse Voltage Leakage Current
I_R
(V _R = 50 Vdc, T _J = 125°C)
—
100
(V _R = 50Vdc)
—
0.1
Diode Capacitance
(V _R = 0, f = 1.0 MHz)
C_D
—
2.0
Forward Voltage
V_F
(I _F = 100 mAdc)
—
1.0
Reverse Recovery Time
t _rr
—
4.0
(I _F=I_R=10mAdc, I_R(REC)=1.0mAdc, measured at I_R= 1.0 mA, R_L=100Ω)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Unit
Vdc
µAdc
pF
Vdc
ns
G6–1/2