BAS70LT1 Datasheet, PDF (1/2 Pages) Motorola, Inc – CASE 318 08, STYLE 8 SOT 23 (TO 236AB)

LESHAN RADIO COMPANY, LTD.
SCHOTTKY Barrier Diode
These Schottky barrier diodes are designed for high speed
switching applications, circuit protection, and voltage clamping.
Extremely low forward voltage reduces conduction loss. Min-
iature surface mount package is excellent for hand held and
portable applications where space is limited.
• Extremely Fast Switching Speed
• Low Forward Voltage — 0.75 Volts (Typ) @ IF = 10 mAdc
BAS70LT1
3
1
2
CASE 318–08, STYLE 11
SOT–23 (TO–236AB)
* ^{70V SCHOTTKY BARRIER DIODES}
ANODE
1
CATHODE
3
DEVICE MARKING
BAS70LT1= BE
MAXIMUM RATINGS (TJ = 150°C unless otherwise noted)
Rating
Reverse Voltage
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
Operating Junction and Storage
Temperature Range
Symbol
VR
PF
TJ, Tstg
Value
70
225
1.8
–55 to +150
Unit
Volts
mW
mW/°C
°C
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Reverse Breakdown Voltage (IR = 10 µA)
V(BR)R
70
—
Total Capacitance (VR = 1.0 V, f = 1.0 MHz)
CT
—
2.0
Reverse Leakage (VR = 50 V)
IR
—
0.1
(VR = 70V)
—
10
Forward Voltage (IF = 1.0 mAdc)
VF
—
410
Forward Voltage (IF = 10 mAdc)
VF
—
750
Forward Voltage (IF = 15 mAdc)
VF
—
1.0
Unit
Volts
pF
µAdc
mVdc
mVdc
Vdc
BAS70LT1–1/2