BAS40-04LT1 Datasheet, PDF (1/2 Pages) ON Semiconductor – SCHOTTKY BARRIER DIODES

LESHAN RADIO COMPANY, LTD.
Dual Series
Schottky Barrier Diode
These Schottky barrier diodes are designed
for high speed switching applications, circuit
protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Min-
iature surface mount package is excellent for
hand held and portable applications where
space is limited.
• Extremely Fast Switching Speed
• Low Forward Voltage — 0.50 Volts (Typ)
@ IF = 10 mAdc
BAS40-04LT1
3
1
2
CASE 318–08, STYLE 11
SOT–23 (TO–236AB)
* ^{40V SCHOTTKY BARRIER DIODES}
ANODE
1
CATHODE
2
3
CATHODE/ANODE
MAXIMUM RATINGS (TJ = 150°C unless otherwise noted)
Rating
Reverse Voltage
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
Operating Junction and Storage
Temperature Range
Symbol
VR
PF
TJ, Tstg
Value
40
225
1.8
–55 to +150
Unit
Volts
mW
mW/°C
°C
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Reverse Breakdown Voltage (IR = 10 µA)
V(BR)R
40
—
Total Capacitance (VR = 1.0 V, f = 1.0 MHz)
CT
—
5.0
Reverse Leakage (VR = 25 V)
IR
—
1.0
Forward Voltage (IF = 0.1 mAdc)
VF
—
380
Forward Voltage (IF = 30 mAdc)
VF
—
500
Forward Voltage (IF = 100 mAdc)
VF
—
1.0
Unit
Volts
pF
µAdc
mVdc
mVdc
Vdc
BAS40-04LT1–1/2