BAS20HT1 Datasheet, PDF (1/2 Pages) Leshan Radio Company – High Voltage Switching Diode

LESHAN RADIO COMPANY, LTD.
High Voltage
Switching Diode
BAS20HT1
• Device Marking: JS
1
CATHODE
2
ANODE
1
2
CASE 477, STYLE 1
SOD– 323
ORDERING INFORMATION
Device
BAS20HT1
Package
SOD–323
Shipping
3000/Tape & Reel
Preferred: devices are recommended choices for future use and best overall value.
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
Symbol
VR
IF
IFM(surge)
Value
250
200
625
Unit
Vdc
mAdc
mAdc
MARKING DIAGRAM
JS M
JS= Specific Device Code
M = Date Code
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board,*
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage
Temperature Range
Symbol
PD
RθJA
TJ, Tstg
Max
200
1.57
635
–55 to+150
Unit
mW
mW/°C
°C/W
°C
*FR–5 Minimum Pad
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 200 Vdc)
(VR = 200 Vdc, TJ = 150°C)
Reverse Breakdown Voltage
(IBR = 100 µAdc)
Forward Voltage
(IF = 100 mAdc)
(IF = 200 mAdc)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
Reverse Recovery Time
(IF = IR = 30 mAdc, RL = 100 Ω)
IR
V(BR)
VF
CD
trr
–
–
250
–
–
–
–
Max
1.0
100
–
1000
1250
5.0
50
Unit
µAdc
Vdc
mV
pF
ns
BAS20HT1–1/2