BAS116LT1 Datasheet, PDF (1/2 Pages) ON Semiconductor – Switching Diode

LESHAN RADIO COMPANY, LTD.
Switching Diode
This switching diode has the following features:
• Low Leakage Current Applications
• Medium Speed Switching Times
• Available in 8 mm Tape and Reel
Use BAS116LT1 to order the 7 inch/3,000 unit reel
Use BAS116LT3 to order the 13 inch/10,000 unit reel
BAS116LT1
3
MAXIMUM RATINGS
3
CATHODE
1
ANODE
Rating
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
DEVICE MARKING
Symbol
V_R
I_F
I _FM(surge)
Value
75
200
500
Unit
Vdc
mAdc
mAdc
BAS116LT1 = JV
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P_D
R_θJA
P_D
R_θJA
T_J , T_stg
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
417
–55 to +150
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (T _A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Reverse Voltage Leakage Current (V _R = 75 Vdc )
I_R
––
(V _R = 75 Vdc , T _J =150°C)
––
Reverse Breakdown Voltage
(I _BR = 100 µAdc)
V _(BR)
75
Forward Voltage (I _F = 1.0 mAdc)
V_F
––
(I _F = 10 mAdc)
—
(I _F = 50 mAdc)
––
(I _F = 150 mAdc)
—
Diode Capacitance(V _R = 0, f = 1.0 MHz)
C_D
—
Reverse Recovery Time
(I _F = I _R = 10mAdc, )( Figure 1)
t _rr
—
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Max
5.0
80
—
900
1000
1100
1250
2.0
3.0
1
2
CASE 318–08, STYLE 8
SOT–23 (TO–236AB)
Unit
nAdc
Vdc
mV
pF
µs
G4–1/2