BAP65-02 Datasheet, PDF (1/2 Pages) Leshan Radio Company – Silicon PIN diode

LESHAN RADIO COMPANY, LTD.
Silicon PIN diode
FEATURES
· High voltage, current controlled
· RF resistor for RF switches
· Low diode capacitance
· Low diode forward resistance (low loss)
· Very low series inductance.
APPLICATIONS
· RF attenuators and switches
1
CATHODE
· Bandswitch for TV tuners
· Series diode for mobile communication transmit/receive switch.
DESCRIPTION
Planar PIN diode in a SOD523 ultra small SMD plastic package.
BAP65 – 02
2
ANODE
1
2
SOD523 SC-79
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC60134).
SYMBOL
VR
I
IF
P tot
T stg
Tj
PARAMETER
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
junction temperature
CONDITIONS
T s < 90°C
MIN.
–
–
–
-65
-65
MAX.
30
100
715
+150
+150
ELECTRICAL CHARACTERISTICS T j = 25°C unless otherwise specified.
SYMBOL PARAMETER
CONDITIONS
VF
forward voltage
IR
reverse current
C d diode capacitance
r D diode forward resistance
|s 21| ²
isolation
|s 21| ²
insertion loss
|s 21| ²
insertion loss
|s 21| ²
insertion loss
|s 21| ²
insertion loss
I F =50 mA
V R =20 V
V R = 0; f = 1 MHz
V R = 1 V; f = 1 MHz
V R = 3 V; f = 1 MHz
V R = 20 V; f = 1 MHz
I F = 1 mA; f = 100 MHz;
I F = 5 mA; f = 100 MHz; note 1
I F = 10 mA; f = 100 MHz; note 1
I F = 100 mA; f = 100 MHz;
V R = 0; f = 900 MHz
V R = 0; f = 1800 MHz
V R = 0; f = 2450 MHz
I F = 1 mA; f = 900 MHz
I F = 1 mA; f = 1800 MHz
I F = 1 mA; f = 2450 MHz
I F = 5 mA; f = 900 MHz
I F = 5 mA; f = 1800 MHz
I F = 5 mA; f = 2450 MHz
I F = 10 mA; f = 900 MHz
I F = 10 mA; f = 1800 MHz
I F = 10 mA; f = 2450 MHz
I F = 100 mA; f = 900 MHz
I F = 100 mA; f = 1800 MHz
I F = 100 mA; f = 2450 MHz
TYP.
0.9
–
0.65
0.55
0.5
0.375
1
0.65
0.56
0.35
10
5.8
4.4
0.11
0.13
0.16
0.08
0.11
0.13
0.07
0.1
0.13
0.07
0.1
0.128
MAX.
1.1
20
–
0.9
0.8
–
–
0.95
0.9
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
UNIT
V
mA
mW
°C
°C
UNIT
V
nA
pF
pF
pF
pF
Ω
Ω
Ω
Ω
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
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