BAP64-02 Datasheet, PDF (1/2 Pages) NXP Semiconductors – Silicon PIN diode

LESHAN RADIO COMPANY, LTD.
Silicon PIN diode
FEATURES
· High voltage, current controlled
· RF resistor for RF attenuators and switches
· Low diode capacitance
· Low diode forward resistance
· Very low series inductance
· For applications up to 3 GHz.
APPLICATIONS
· RF attenuators and switches.
DESCRIPTION
Planar PIN diode in a SOD523 ultra small plastic SMD package.
1
CATHODE
2
ANODE
BAP64 – 02
1
2
SOD523 SC-79
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VR
I
IF
P tot
T stg
Tj
PARAMETER
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
junction temperature
CONDITIONS
T s =90°C
MIN.
–
–
–
-65
-65
MAX.
175
100
715
+150
+150
UNIT
V
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS T j = 25°C unless otherwise specified.
SYMBOL PARAMETER
CONDITIONS
VF
forward voltage
I F =50 mA
IR
reverse current
V R =175V
V R =20V
C d diode capacitance
V R = 0; f = 1 MHz
V R = 1 V; f = 1 MHz
V R = 20 V; f = 1 MHz
r D diode forward resistance
I F = 0.5 mA; f = 100 MHz; note 1
I F = 1 mA; f = 100 MHz; note 1
I F = 10 mA; f = 100 MHz; note 1
I F = 100 mA; f = 100 MHz; note 1
τ L charge carrier life time
when switched from I F =10 mA to
I R = 6 mA; R L = 100 Ω;
measured at I R =3 mA
L S series inductance
Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
TYP.
0.95
–
–
0.48
0.35
0.23
20
10
2
0.7
1.55
0.6
MAX.
1.1
10
1
–
–
0.35
40
20
3.8
1.35
–
UNIT
V
µA
µA
pF
pF
pF
Ω
Ω
Ω
Ω
µs
–
nH
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to soldering-point
VALUE
85
UNIT
K/W
S26–1/2