BAP50-02 Datasheet, PDF (1/2 Pages) Leshan Radio Company – General purpose PIN diode

LESHAN RADIO COMPANY, LTD.
General purpose PIN diode
FEATURES
· Low diode capacitance
· Low diode forward resistance.
APPLICATIONS
· General RF applications.
DESCRIPTION
General purpose PIN diode in a SOD523 small SMD plastic package.
1
CATHODE
2
ANODE
BAP50 – 02
1
2
SOD523 SC-79
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VR
I
IF
P tot
T stg
Tj
PARAMETER
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
junction temperature
CONDITIONS
T s =90°C
MIN.
–
–
–
-65
-65
MAX.
50
50
715
+150
+150
UNIT
V
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS T j = 25°C unless otherwise specified.
SYMBOL PARAMETER
CONDITIONS
MIN
VF
forward voltage
I F =50 mA
–
VR
reverse voltage
I R =10µA
50
IR
reverse current
V R =50 V
–
C d diode capacitance
V R = 0; f = 1 MHz
–
V R = 1 V; f = 1 MHz
–
V R = 5 V; f = 1 MHz
–
r D diode forward resistance I F = 0.5 mA; f = 100 MHz; note 1
–
I F = 1 mA; f = 100 MHz; note 1
–
I F = 10 mA; f = 100 MHz; note 1
–
|s 21| ²
isolation
V R = 0; f = 900 MHz
–
V R = 0; f = 1800 MHz
–
V R = 0; f = 2450 MHz
–
|s 21| ²
insertion loss
I F = 0.5 mA; f = 900 MHz
–
I F = 0.5 mA; f = 1800 MHz
–
I F = 0.5 mA; f = 2450 MHz
–
|s 21| ²
insertion loss
I F = 1 mA; f = 900 MHz
–
I F = 1 mA; f = 1800 MHz
–
I F = 1 mA; f = 2450 MHz
–
|s 21| ²
insertion loss
I F = 10 mA; f = 900 MHz
–
I F = 10 mA; f = 1800 MHz
–
I F = 10 mA; f = 2450 MHz
–
TYP.
0.95
–
–
0.4
0.3
0.22
25
14
3
20.4
17.3
15.5
1.74
1.79
1.88
1.03
1.09
1.15
0.26
0.32
0.34
MAX.
1.1
–
100
–
0.55
0.35
40
25
5
–
–
–
–
–
–
–
–
–
–
–
–
UNIT
V
V
nA
pF
pF
pF
Ω
Ω
Ω
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
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