BAL99LT1 Datasheet, PDF (1/2 Pages) Motorola, Inc – CASE 318-08, STYLE 18 SOT-23 (TO-236AB)

LESHAN RADIO COMPANY, LTD.
Switching Diode
3
ANODE
2
CATHODE
BAL99LT1
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
Peak Forward Current
Symbol
V_R
I_F
Value
70
100
Unit
Vdc
mAdc
DEVICE MARKING
BAL99LT1 = JF
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P_D
R _θJA
P_D
R _θJA
T _J , T _stg
Max
225
1.8
556
300
2.4
417
–55 to +150
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
I_R
(V _R = 70 Vdc)
—
(V _R = 25 Vdc, T _J = 150°C)
—
(V _R = 70 Vdc, T _J = 150°C)
—
Reverse Breakdown Voltage
(I _R = 100 µAdc)
V _(BR)
70
Forward Voltage
V_F
(I _F = 1.0 mAdc)
—
(I _F = 10 mAdc)
—
(I _F = 50 mAdc)
—
(I _F = 150 mAdc)
—
Recovery Current
(I _F = 10 mAdc, V _R = 5.0 Vdc, R _L = 500 Ω)
Q_S
—
Diode Capacitance
(V _R = 0, f = 1.0 MHz)
C_D
—
Reverse Recovery Time
(I _F = I _R = 10 mAdc, R _L = 100 Ω, measured at I _R = 1.0 mAdc)
t _rr
—
Forward Recovery Voltage
(I _F = 10 mAdc, t _r = 20 ns)
V _FR
—
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3
1
2
CASE 318–08, STYLE 18
SOT–23 (TO–236AB)
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Max
2.5
30
50
—
715
855
1000
1250
45
1.5
6.0
1.75
Unit
µAdc
Vdc
mV
pC
pF
ns
Vdc
G1–1/2