BA892 Datasheet, PDF (1/2 Pages) NXP Semiconductors – Band-switching diode

LESHAN RADIO COMPANY, LTD.
Band-switching diode
FEATURES
· Small plastic SMD package
· Low diode capacitance
· Low diode forward resistance
· Small inductance.
APPLICATIONS
· Low loss band-switching in VHF television tuners
· Surface mount band-switching circuits.
DESCRIPTION
Planar, high performance band-switch diode in a small SMD plastic
package (SOD523).
1
CATHODE
2
ANODE
BA 892
1
2
SOD523 SC-79
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VR
I
IF
P tot
T stg
Tj
PARAMETER
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
junction temperature
CONDITIONS
T s =90°C
MIN.
–
–
–
-65
-65
MAX.
35
100
715
+150
+150
UNIT
V
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS T j = 25°C unless otherwise specified.
SYMBOL PARAMETER
CONDITIONS
MIN
V _F forward voltage
I F =10 mA
–
I R reverse current
V R =30 V
–
C d diode capacitance
f = 1 MHz; note 1;
V R=1V
–
V R=3V
0.6
r D diode forward resistance
f = 100 MHz; note 1;
I F = 3 mA
–
I F = 10 mA
–
L S series inductance
–
Note
1. Guaranteed on AQL basis; inspection level S4, AQL 1.0.
TYP.
–
–
MAX.
1
20
UNIT
V
nA
0.92 1.4 pF
0.85 1.1 pF
0.45 0.7 Ω
0.36 0.5 Ω
0.6
-
nH
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to soldering-point
VALUE
85
UNIT
K/W
S22–1/2